Abstract
Graphene-like carbon films have been fabricated by annealing carbide-derived carbons on 6H-SiC (0001¯) at lower temperature in Ar ambience. Those films show a moderate interaction with substrates and an ordered stacking along c-axis and exhibit the same Raman spectra as that of epitaxial graphene on SiC. This carbon film growth process developed here will provide a new approach to obtain graphene epitaxially grown on SiC substrate at lower cost compared with the traditional access.
Highlights
Graphitization schedule is discussed in supplementary material: I
Just as shown in supplementary material, the bands in Raman spectra of our carbon films could be definitely assigned to the vibrational modes of carbon materials
When the carbide-derived carbons (CDCs) films are annealed at 1100 ◦C for appropriate time, the Raman spectra of those samples change extremely
Summary
Graphitization schedule is discussed in supplementary material: I.
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