Abstract
ABSTRACT Graphene, 2D form of graphite, exhibits excellent electrical conductivity and many peculiar properties 1-3 . Thats why extensive research is going on this field worldwide. Here, we present the physico-chemical method for the synthesis of graphene sheets. Transmission electron microscopy (TEM) and Raman spectroscopy was used to characterize the graphene sheets and then graphene field-effect transistor was fabricated with copper as a source-drain electrode. Graphene, TEM, Raman spectroscopy, FET and mobility 1. INTRODUCTION Recently, it has been widely recognized that graphene based devices are promising candidates to complement well established silicon technology in future generations of microelectronic devices. Now a days various methods have been developed to produce graphene. Exfoliation of thin graphene sheets from bulk graphite using scotch tape has been used widely with good reproducibility 4 . CVD and chemical methods have also been used frequently to produce large area graphene sheets
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