Abstract
This study concerns the characteristics of white GaN-based light-emitting diode (LED) on flexible substrates. The thin film GaN-based blue LEDs were directly transferred from sapphire onto the flexible polydimethylsiloxane (PDMS) substrates by laser lift-off (LLO) process. The PDMS substrates were incorporated 10–40% cerium doped yttrium aluminum garnet phosphor, YAG:Ce3+, and formed the GaN-based white LEDs. The white LEDs prepared by the GaN-based LEDs on the YAG-PDMS substrates reveal one peak at 470 nm corresponding to the emission of the GaN-based LED and a broadband included five weak peaks caused by YAG:Ce3+phosphors.
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