Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates

Lung-Chien Chen,Wen-Wei Lin,Jun-Wei Chen

doi:10.1155/2015/537163

Abstract

This study concerns the characteristics of white GaN-based light-emitting diode (LED) on flexible substrates. The thin film GaN-based blue LEDs were directly transferred from sapphire onto the flexible polydimethylsiloxane (PDMS) substrates by laser lift-off (LLO) process. The PDMS substrates were incorporated 10–40% cerium doped yttrium aluminum garnet phosphor, YAG:Ce3+, and formed the GaN-based white LEDs. The white LEDs prepared by the GaN-based LEDs on the YAG-PDMS substrates reveal one peak at 470 nm corresponding to the emission of the GaN-based LED and a broadband included five weak peaks caused by YAG:Ce3+phosphors.

Highlights

light-emitting diode (LED) are regarded as the most important light source in next-generation solid-state lighting to advantages in energy efficiency, long life, high reliability, and multiple applications [1, 2]
The comparably good electrical characteristics of the GaN-based LED on flexible PDMS substrates that proposed the laser lift-off technology would not degrade device electrical performance and have better trend owing to the vertical operating device
The white light may have contributed to the wide emission band ranging from 400 to 750 nm

Summary

Introduction

LEDs are regarded as the most important light source in next-generation solid-state lighting to advantages in energy efficiency, long life, high reliability, and multiple applications [1, 2]. Due to the more benefits with flexible substrate, the fabrication of lighting sources on flexible substrates has been studied vigorously to develop, such as biomedical applications, deformable display, wearable devices, and flexible LEDs [3–6]. Several approaches have presented flexible lightemitting diodes (F-LEDs) by transferring microstructured GaAs/GaN to flexible substrates [7–10]. The majority methods have produced flexible and highly efficient thin film GaN-based LEDs by laser lift-off (LLO) technology [11–15]. The fabrication of thin film GaN-based light-emitting diodes (GaN-based LEDs) was transferred from sapphire to flexible substrate by LLO method and produced the white light-emitting diode device

Experimental

Results and Discussion

Conclusions