Fabrication of GaN‐based UV TF‐ELDs by CS‐MBE technique and their application to RGB light‐emitting pixels

Abstract

AbstractGaN‐based thin‐film electroluminescence devices (TF‐ELDs) operating in the UV spectral region were fabricated on Al substrates. GaN films were deposited by compound‐source molecular beam epitaxy (CS‐MBE) technique. Red, green and blue (RGB) light‐emitting pixels were fabricated using the GaN‐based TF‐ELDs as excitation sources. The emission efficiencies of such TF‐ELDs were reported. The estimated luminances of the RGB emitters based on the GaN films were 0.2‐7 kcd/m2, which indicate that the GaN‐based TF‐ELDs have a potential for application in flat‐panel displays (FPDs). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)