Abstract
The authors report the fabrication of GaN nanowire arrays inside a thick SiNx, selective growth mask that was patterned by interferometric lithography and dry etching. The GaN nanowires are molded by the apertures in the selective growth mask and the growth is epitaxial with respect to the underlying GaN layer. The precise location and diameter of each nanowire in the array are controlled by the growth mask patterning, and the resulting array has a long-range order that is compatible with photonic crystal applications. This process uses conventional metal organic precursors and does not require any additional metal catalysts.
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