Abstract

Several samples of GaAs/GaAsP superlattice were fabricated using a method of the Metalorganic Chemical Vapor Deposition (MOCVD) growth for the purpose of investigating various properties as a photocathode of spin-polarized electron sources. The MOCVD growth is easy to control in comparison with the Molecular Beam Epitaxial (MBE) growth in the fabrication procedure of the GaAs/GaAsP superlattices. We used Tertiarybutylarsine (TBAs) and Tertiarybutylphophine (TBP) as V-group sources to make the samples. It is for this reason that the toxicity of TBAs and TBP is lower than that of arsine (AsH3) and phosphine (PH3) which are commonly used, and the pyrolysis temperature for TBAs and TBP is lower than that for AsH3 and PH3 [1]. A large spin-polarization exceeding 90% was observed using the sample made in this method. We also obtained large quantum efficiencies of approximately 0.4% in the wavelength range from 760 nm to 780 nm.

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