Abstract
A two dimensional (2D) GaAs hole array with a high aspect ratio was successfully fabricated by dry etching techniques using a highly ordered alumina membrane as a mask. The reflection spectra of the GaAs hole array shows characteristics of the photonic bandgap (PBG) calculated by using the 2D triangular lattice structure. Various defect lines were formed etching in the GaAs hole array using focused ion beam. The defect-type PBG waveguide was experimentally demonstrated.
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