Fabrication of GaAs and InAs wires in nanochannel glass

Abstract

A newly developed porous glass, nanochannel glass, was used to fabricate uniform, high-density GaAs and InAs micro- and nanowires with high aspect ratios. The fabrication process utilized reactions between organogallium and organoindium compounds with arsine to produce polycrystalline GaAs and InAs with crystallite sizes of approximately 50–130 Å when annealed at 400–500 °C. At the higher annealing temperatures, the InAs wires exhibited an increase in surface porosity and grain size, whereas the GaAs wires maintained a uniform, smooth texture.