Abstract
Copyright (c) 1996 Elsevier Science B.V. All rights reserved. Straight and chevron-shaped free-standing GaAs wires have been fabricated using an in situ process involving an electron-beam system with gas injection at the sample. Patterned electron-beam-induced oxidation, defined by appropriate beam scanning, forms a masking layer for subsequent Cl 2 etching. The fabrication of chevron-shaped wires is possible using undercut that occurred along etch-mask edges aligned to the [01&1macr;] direction and at about ±30° to this direction. Straight free-standing wires have been used in a gas-pressure microsensor.
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