Abstract
In this study, the F–Nb co-doped TiO2 films (TFNO) were prepared on soda lime glass using the sol-gel method. Multielement doping was carried out to further improve the conductivity of Nb-doped TiO2 (TNO) thin films by increasing the carrier concentration. The effect of fluorine doping on the microstructure, chemical composition, and optoelectronic properties of the TFNO films was investigated. The results show that the obtained films are polycrystalline with an anatase structure. Both niobium and fluorine are present in the TiO2 films (as Nb5+ and F−). With increasing fluorine doping, the visible-light transmittance of the film increases slightly, and the carrier concentration continues to increase until saturation. However, the carrier mobility decreases gradually. The TFNO film exhibits the optimal optoelectronic properties, when the F:Ti atomic ratio is 0.5:1, reaching a resistivity of 0.02 Ω cm and a visible-light transmittance of 81%.
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