Abstract
Exchange-biased epitaxial magnetic tunnel junctions (MTJs) with a Heusler alloy Co 2Cr 0.6Fe 0.4Al (CCFA) lower electrode, a MgO tunnel barrier, and a Co 50Fe 50 upper electrode were fabricated. Reflection high-energy electron diffraction observations indicated that all layers of the CCFA/MgO/Co 50Fe 50 MTJ layer structure were grown epitaxially. The fabricated epitaxial MTJs exhibited clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 102% at room temperature and 291% at 4.2 K. From the TMR ratios, a high effective spin polarization of 0.86 at 4.2 K was obtained for the epitaxial CCFA films with the B2 structure.
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