Abstract
We fabricated full-epitaxial-NbN Josephson array oscillators to operate over the Nb-gap frequency. The oscillator was formed with 40 shunted NbN/MgO/NbN tunnel junctions and NbN microstrip lines. An NbN/MgO/NbN tunnel junction with an open-stub was used as a detector and was directly connected to the oscillator through the narrow microstrip line. X-ray analysis confirmed that all NbN and MgO layers of the oscillator grew epitaxially. At around 680 GHz, Shapiro steps and photon-assisted tunneling steps induced by Josephson oscillation were clearly observed in the detector I– V characteristics.
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