Abstract
Spinel γ-Al 2O 3 and NiAl 2O 4 thin films were grown on (0 0 1) SrTiO 3 substrates by pulsed laser deposition. The high quality of epitaxial growth and cube-on-cube orientation of the films were confirmed by X-ray diffraction and transmission electron microscopy. The growth of NiAl 2O 4 thin films is related to the reaction between sequentially deposited γ-Al 2O 3 and NiO layers. These films were grown using a unique “multi-target” approach.
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