Fabrication of enhancement-mode high electron mobility transistors (HEMTs) by electrodeless photoelectrochemical etching

Abstract

In this paper, we adopted electrodeless photoelectrochemical etching technology to fabricate the enhancement-mode high electron mobility transistors (HEMTs). The technique of photoelectrochemical etching is a low damage etching method. Enhancement-mode recess gate HEMTs were successfully fabricated after electrodeless photoelectrochemical etching. While, in terms of I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Dmax</inf> , compared with 505 mA/mm of non-etched depletion devices, the output current of the recess gate device is slightly reduced to 495 mA/mm. It shows that this etching method has low etching damage to GaN and is suitable for the fabrication of recess gate devices.