Fabrication of enhancement‐mode AlxGa1–xN/GaN junction heterostructure field‐effect transistors with p‐type GaN gate contact

Abstract

AbstractWe have investigated the device performance, such as the breakdown voltages between gate‐source contacts and drain‐source contacts, threshold voltage (Vth) and on resistance (RON), of enhancement‐mode AlxGa1–xN/GaN junction heterostructure field‐effect transistors (JHFET) with a p‐type GaN gate. Fabricating an Al0.15Ga0.85N/GaN JHFET with a gate length of 2 μm without surface passivation, we have achieved a completely enhancement‐mode JHFET with a threshold voltage of +0.55 V, and breakdown voltages between gate‐source and drain‐source were over 100 V and 250 V, respectively. RON is as low as 4.5 mΩ · cm2 at VG = 3.0 V. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)