Abstract
Fabrication of dual-termination Schottky barrier diode (SBDDT) by using oxygen-/fluorine-terminated diamond (OT-/FT-diamond) has been carried out on P-/P+ diamond. X-ray photoelectron spectroscopy (XPS) measurement was used to determine the chemical composition of OT-/FT-diamond surface treated by ultraviolet ozone and C4F8 plasma, respectively. The barrier heights of Au on OT-/FT-diamond were calculated to be 2.0 ± 0.12 and 2.39 ± 0.12 eV, respectively. Au film was patterned on the OT-/FT-diamond as the schottky electrode, and Ti/Au film were deposited on the backside of substrate as ohmic electrode, then a SBDDT was achieved completely. SBDDT exhibits better forward and reverse I-V characteristics based on the optimum OT-/FT-diamond (WO/WF) area ratio 0.2, which illustrates that the combination of dual surface termination is an efficient way to optimize the performance of diamond SBD.
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