Abstract
We experimentally demonstrate an optical micro-ring modulator based on a reverse-biased PN junction which is integrated into a silicon-on-insulator (SOI) rib waveguide. The performance of micro-ring resonator with different sizes is simulated with Lumerical MODE Solutions. The fabricated device provides a high extinction ratio (ER) of 20 dB and coupling quality factor (Q) 2*10 4 . Modulation rate is higher than 11 Gbit/s with only 2 V peak-to-peak (Vpp) driving voltage. The theoretical modulation rate can be higher than 25 Gbit/s by the optimizing the matching resistor and the test system.
Highlights
High speed electro-optic modulator is a key component in photonics systems for datacom applications
Modulation rate is higher than 11 Gbit/s with only 2 V peak-to-peak (Vpp) driving voltage
Its position is critical to the performance of modulator since the frequency response is limited by the RC cut off frequency resulting from capacitive effects within the junction and the resistance of the doped regions and metal contacts [21]
Summary
High speed electro-optic modulator is a key component in photonics systems for datacom applications. The carrierdepletion silicon ring modulators employing reversebiased PN diode have been demonstrated to have desirable outstanding performances including high speed higher than 10 Gb/s, high extinction ratio (ER) more than 5 dB, low peak-to-peak driving voltage (Vpp) less than 2 V, and insensitive to carrier lifetime [9], etc. Most of silicon-based modulators are incorporated into Mach-Zehnder Interferometer (MZI) structures in order to obtain a wider optical bandwidth, high thermal stability, lower chirp, more reasonable tolerance to fabrication variations and no photon cavity lifetime limitation [12]. In this work, relying on the advanced processing condition of Center for Advanced Electronic Material and Devices (AEMD) in Shanghai Jiao Tong University, we designed and fabricated a depletion type micro-ring modulator integrated with high-index-contrast SOI rib waveguides. Modulation rate is higher than 11 Gbit/s with 2Vpp from -1.6 V to 0.4 V
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