Abstract
We report detailed study on control of sputtering parameters for NbN thin film superconductor. The NbN films are deposited on single crystalline Silicon (100) by DC reactive sputtering technique i.e., deposition of Nb in presence of reactive N2 (purity 99.9%) gas. After several runs, the partial gas ratio of Ar: N2 and deposition time are optimized respectively at 80: 20 and 10 minutes. The optimized film possesses Tc (R=0) in zero and 140 kOe fields at 14.3 K and 8.8 K respectively. The fabricated relatively thick film (600 nm) is crystallized in cubic structure, with small quantity of Nb/NbOx embedded in main NbN phase. Our efforts to reduce the thickness of the film failed because 5 minutes deposited film resulted in hexagonal phase with nonsuperconducting behavior. The upper critical field Hc2(0) of the optimized superconducting film is evaluated from the magnetotransport measurements in applied of up to 140 kOe. The Hc2(0) is found to be above 400 kOe, which to our knowledge is best reported value of Hc2(0) yet for thin/thick film or bulk NbN in literature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
