Fabrication of cupric oxide‐based transistors by sol–gel technique

Abstract

Solution-processed metal-oxide semiconductors are a great challenge for advanced electronic devices. Here we report the fabrication of field-effect transistor with a cupric oxide (CuO) films prepared by the sol–gel technique. The X-ray diffraction and optical spectroscopy confirmed the presence of polycrystalline cupric oxide film with an energy gap of 1.0 eV. The field-effect transistor proved semiconductor behaviour with p-type conductivity and the charge mobility of 0.034 cm2/V s and On/Off ratio of 104, that makes the sol–gel technique a suitable low-cost alternative of sputtering technique.