Abstract
Ternary compounds such as Cu4SnS4 thin films can be deposited onto glass substrates by various deposition methods: electrodeposition, chemical bath deposition, successive ionic layer adsorption and reaction, and evaporation techniques. Cu4SnS4 films could be used in solar cell applications because of their suitable band gap and large absorption coefficient. This paper reviews previous researches on Cu4SnS4 thin films. X-ray diffraction showed that the obtained films are orthorhombic in structure and polycrystalline in nature. Cu4SnS4 films exhibited p-type electrical conductivity and indicated band gap values in the range of 0.93 to 1.84eV.
Highlights
The preparation and characterization of binary [1,2,3,4,5,6], ternary [7,8,9,10], quaternary [11,12,13] and pentanary thin films [1418] have been reported
This paper examines various deposition techniques used on the production of Cu4SnS4 thin films, investigating their results
Nanostructured Cu4SnS4 films were produced by annealing chemical bath deposited SnS–CuS stacks at 823K in a graphite box under various N2+S2 pressures [29]
Summary
The preparation and characterization of binary [1,2,3,4,5,6], ternary [7,8,9,10], quaternary [11,12,13] and pentanary thin films [1418] have been reported. These films are produced using various physical and chemical deposition techniques [19], each having its own advantages and limitations. The photovoltaic parameters of Cu4SnS4 films used as absorber material in solar cell applications are presented
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