Abstract
Cu2ZnSnS4 (CZTS) films were prepared by sulfurizing Cu–Zn–Sn precursor deposited via a simple solution method using environment-friendly citric acid as complexing agent. A single Cu2ZnSnS4 thin film was obtained at 500 °C under a mixed N2 + H2S (5%) atmosphere. The effects of sulfurization temperature on structural, morphological and optical properties were studied. The results showed that the CZTS thin film annealed at 500 °C exhibited large agglomeration of grains, ideal band gap (E g = 1.49 eV) and high optical absorption coefficient (>104 cm−1). The resulted carrier concentration and mobility were about 3.652 × 1018 cm−3 and 26.32 cm2/Vs, respectively.
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