Abstract
Silicon is applied widely because of its good electrical properties, thermal conductivity and optical processing. It is necessary to fabricate a heat sink on silicon substrate to improve the heat dissipation ability for modern industrial application. There are many traditional methods of processing heat sink on silicon substrate. However, it is hardly to meet the requirements of today’s technology for the disadvantages such as residual stress exist, processing shape limited and inefficiency. The investigation on fabricating heat sink silicon substrate by direct later sintering was conducted in this study. By sintering a transition layer, coppery heat sink with channel width of several hundred micrometers and circinate shape has been fabricated by direct laser sintering. Furthermore, the bonding mechanism and the influence of the powder components on the interface morphology and structure have been investigated.
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