Abstract
Copper nanowires and graphene (CuNWs-GNs) composites are of considerable interest for the fabrication of stable and low-cost flexible electrodes for modern electronic devices. However, their current synthetic methods are either complication, requiring special equipment, or using hazardous chemicals. In this work, we proposed a new strategy to synthesize CuNWs-GNs composite using the hydroxylated graphene (GOH) as a reducing agent and protector for the first time. The CuNWs in-situ grew between the GOH interlayers and were completely covered by the latter. This novel structure empowered excellent electrical conductivity of 2.12 × 106 S/m at a sheet resistance (Rs) value of 0.037 Ω sq−1 with extended stability over 60 days at 25 °C, and 80 °C for 7 days in different humidity. The composite also presented applicable optoelectronics properties and excellent bending stability. This approach is expected as an effective way to solve the big issue of CuNWs in terms of instability for its practical application.
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