Abstract
Metal Semiconductor Metal (MSM) photodetector devices based on metal organic chemical vapour deposition grown InGaN/GaN heterostructures with Ni/Au contacts has been fabricated with activity under near ultraviolet/visible region of spectra. Composition controlled InGaN/GaN heterostructures has been utilized for device fabrication to realize its correlation with the electrical performance and responsivity of the device. The steady and transient performance of the as designed photodetectors were investigated and a photo response time <9 ms, responsivity of 0.920 A/W and high detectivity range of ∼3.46 × 1013 Jones has been achieved at a wavelength of 360 nm for an indium composition of 10%. We have observed that an increasing indium content in InGaN layers up to an optimum value resulted in an increase in device performance which has been explained with the help of various structural, morphological, optical and spectroscopic analysis. The obtained results were competing with the many previously reported photodetectors.
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