Abstract
This paper discusses about the fabrication of comb-structure with vertical sidewall profile by wet chemical etching of Si (110) substrate in boiling KOH solution. Etch rate of the Si (110) substrate in boiling KOH solution is 9 times higher with a 40X reduction of average surface roughness than the etch rate at 75 °C. An etch selectivity of 48:1 for the (110) over (111) plane is observed in the boiling KOH solution (35 wt%). A rhombus shaped comb-finger mask is used to fabricate the comb-structure. Each comb finger has the dimension of length: 500 µm and width: 8 µm with inter-comb spacing of 5 µm. Finally, suspended comb-type MEMS structure is realized by using the dissolved wafer process technique.
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