Abstract
We use ion implantation as a new approach to build an anti-ferromagnetic (AFM) cluster embedded exchange bias (EB) system. Co film with thickness of 130 nm is deposited on the Si (111) substrate using magnetron sputtering, 60keV O+ is chosen to implanted into the Co film to form CoO AFM clusters coupling with Co matrix at the interface. By measuring the hysteresis loop after field-cooling, significant shifts of loop along the applied field are confirmed. When increasing the implantation dose to 2 × 1017/cm2 and annealed samples in N2 atmosphere, we obtain the highest HEB to 458 Oe.
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