Abstract
Cerium dioxide films were deposited by chemical vapor deposition using tetrakis (3-methyl-3-pentoxy) cerium. In the present CVD process, Arrhenius plots indicated the existence of two activation energies of 0.85 eV and 0.29 eV. For the samples deposited under the condition of the lower activation energy of 0.29 eV, electrical properties were improved after annealing at 500 {degree sign}C in Ar, O2, and O-radical ambient. A hysteresis of 2.0 V and a flat band voltage shift of 3.0 V for the as-deposited film decreased to 0.15 V and almost 0 V after annealing, respectively. The leakage current decreased by 4 orders of magnitude after annealing in an oxidizing ambient, and even more improved value of the order of 10-7 A/cm2 was obtained after annealing in the O-radical ambient. For the samples deposited under the condition of the higher activation energy of 0.85 eV, however, electrical properties were not improved even after annealing.
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