Abstract
In the present work successive ionic layer adsorption and reaction (SILAR) method has been employed for the growth of SnS films on chemical bath deposited CdS thin films. The as-grown and post annealed CdS/SnS heterostructures were investigated under dark and illuminated conditions. It has been observed that annealing improves the quality of the device. This paper presents the attempt towards realizing SnS based heterostructured devices using SnS films grown by SILAR technique.
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