Abstract
Developing efficient photocatalysts is one of green and low cost tactic for addressing the environmental deterioration and energy crisis. Therefore, it remains a fantastic and important strategy to design an efficient junction between different semiconductors for harvesting solar light, boosting the redox capability. Herein, the fabrication of ZnS in situ decorated CdIn2S4 (referred to as CIS-Zx) were prepared by converting ZnS particles on Cd2In4S surface by a facile cation exchange method during solvothermal synthesis. According to a series of PEC measurements and DFT calculations, the bending of band edge as well as the establishing of built-in electric field in the interface of CIS/ZnS heterojunction were concluded, causing the formation of in-situ S-scheme heterojunctions in CdIn2S4/ZnS. The in-situ S-scheme heterojunctions can effectively ameliorate the migration behaviors of photo-generated charges. Compared with pure CdInS4, ZnS and physically mixed CdIn2S4/ZnS, the CIS-Zxin-situ S-scheme heterojunction exhibits efficient photocatalytic activity and stability in the selective reduction of aromatic nitro compounds and oxidation of aromatic alcohols, it is hoped that this work will open up a new avenue for innovative applications of in-situ S-scheme heterojunctions.
Published Version
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