Abstract
Carbon nanotubes (CNTs) are fabricated by adopting plasma-enhanced chemical vapor deposition (PECVD) with a planar microwave plasma source. Plasma is produced by a slot antenna at 2.45-GHz microwave injection in CH4/H2 mixture. In this study, it is shown that avoiding the exposure of the substrate to the plasma drastically improves the CNT growth. Furthermore, it is found that the CNT quality can be controlled with the optimization of one of the steps in the catalyst treatment, such as the preheating procedure; the treated catalyst is considered to be unaffected by the heating in the high-density microwave plasma treatment during the CNT growth.
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