Abstract

AAO template technology was combined with silicon technology to be directly applied toelectronic device fabrication. Thin film anodic aluminium oxide (AAO) templates werefabricated on a silicon wafer by multiple anodizations. No electropolishing was used afterthe deposition of the aluminium layer on Si wafers. The ordering of the pore arrangementwas improved by repeated anodizations, and highly ordered AAO templates could beobtained on Si wafers.CNT field emitter arrays were made with the AAO templates on Si wafers. Field emissionmeasurement revealed that the emission current density increased with the synthesistemperature of CNTs. The large field enhancement factor in the range of 2440–4000indicates the potential of the CNT field emitter array based on the AAO template on a Siwafer.

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