Fabrication of capacitive pressure sensor using single crystal diamond cantilever beam

Jiao Fu,Zhangcheng Liu,Hong-Xing Wang,Yan Liang,Ruozheng Wang,Xiaofan Zhang,Tianfei Zhu

doi:10.1038/s41598-019-40582-x

Jiao Fu, Zhangcheng Liu + Show 5 more

Open Access

https://doi.org/10.1038/s41598-019-40582-x

Copy DOI

Journal: Scientific Reports	Publication Date: Mar 18, 2019
Citations: 12	License type: open-access

Affiliation: Xi'an Jiaotong University

Abstract

Fabrication of single crystal diamond capacitive pressure sensor is presented. Firstly, the single crystal diamond cantilever beam was formed on HPHT diamond substrate by using selective high-energy ion implantation, metal patterning, ICP etching and electrochemical etching techniques. Secondly, on this diamond cantilever beam, the desired electrode patterns were processed with photolithography and metal evaporation methods. Furthermore, the displacements of cantilever beam under different pressure conditions were investigated by atomic force microscopy. The capacitance-voltage curves of single crystal diamond cantilever beam and substrate under different force loading conditions were measured by using Agilent B1505A parameter analyzer. The results show that sensitivity increases with the enlargement of electrode area of cantilever beam, and decreases with the rise of measurement frequency.

Highlights

Pressure sensors are realized by a variety of function types including piezoelectricity, piezoresistivity, capacitance, bonded strain gauges and others[1]
The diamond cantilever beam was treated with photolithography and metal evaporation techniques to pattern the desired electrode patterns for electrical measurements of capacitive pressure sensor
The displacement variations of cantilever beam versus force loading and capacitance-voltage curves under different force loading conditions were measured in air at room temperature by using atomic force microscopy and Agilent B1505A parameter analyzer, respectively

Summary

Result and Discussion

An accepted quality diamond epitaxial layer can be grown on the damaged surface layer[6]. Based on the F-w data, the C-V curves of cantilever beam A and B under different force loading conditions were measured and presented, during which the voltage frequencies were 50 KHz, 100 KHz and 1 MHz, respectively.

Conclusion

Author Contributions

Additional Information