Abstract

Potassium-doped strontium barium niobate (SBN) thin films have been fabricated directly on p-type (100)Si substrates using pulsed laser deposition method. The presence of potassium ions and the use of appropriate oxygen pressure help to produce c-axis oriented SBN films. Post-annealing at high temperature also enhances the formation of tetragonal tungsten-bronze phase SBN. Excellent guided mode propagation for 632 nm wavelength radiation has been demonstrated. On the basis of our studies, we have shown that highly c-axis oriented SBN films grown directly on (100)Si substrates can be achieved and SBN is a suitable material for developing integrated electro-optic devices.

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