Fabrication of c‐axis oriented Ga‐doped MgZnO‐based UV transparent electrodes by molecular precursor method

Abstract

AbstractMgZnO films were fabricated by the molecular precursor method (MPM) for their application as UV transparent electrodes. It was clarified that annealing under suitable conditions using an Ar gas flow is effective for the realization of c‐axis‐oriented MgZnO films in the time of a pyrolysis reaction. The resistivity of the Ga‐doped Mg0.1Zn0.9O film was 2.5 × 10‐2 Ω · cm. The resistivity of the c‐axis‐oriented MgZnO films was lower than that of polycrystalline films. This is due to the reduction of the potential barrier at the boundaries of the crystallites. The spontaneous polarization affects the potential barrier. The c‐axis orientation reduces the potential barrier along the deposition plane (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)