Fabrication of blue and green non‐polar InGaN/GaN multiple quantum well light‐emitting diodes on LiAlO2(100) substrates

Abstract

AbstractThe non‐polar m‐plane InGaN/GaN light‐emitting diodes (LEDs) grown by metal‐organic chemical vapor deposition (MOCVD) on LiAlO2(100) substrates were investigated. The structure of LEDs is composed by GaN p–n junction and five InGaN/GaN multiple quantum wells (MQWs). They emit blue or green light, respectively, with different indium composition of InGaN as active layers in the MQWs. Third‐order satellite peaks are observed in high resolution X‐ray diffraction spectrum, indicating good quantum well interfaces. For 800 × 800 µm2 blue LED device, the output power achieves 3 mW under 200 mA injection current. The electroluminescence (EL) spectra of both non‐polar blue and green InGaN/GaN LEDs show that the EL peak wavelength of LEDs almost saturates at certain position with increasing injection currents. This proves the absence of polarization fields in the active region present in c‐plane structures.