Abstract
This work reports fabrication of bistable memory switching devices employing wet-chemically synthesized ZnO nanoparticles with polymethyl methacrylate and poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] polymers. ZnO nanoparticle-embedded polymer layers were coated on conducting indium tin oxide (ITO) glasses using the spin-coating technique. Synthesized ZnO nanoparticles were characterized by scanning electron microscopy, transmission electron microscopy, x-ray diffraction, energy-dispersive x-ray, and photoluminescence studies. These ZnO particles are 20 nm to 30 nm in size with hexagonal structure. Switching and memory effects of the devices fabricated employing the ZnO nanoparticle–polymer composite films were investigated using current–voltage (I–V) characteristics. The I–V measurements of both polymer devices showed electrical bistability. The ON to OFF current ratio of the bistable device was found to be ∼103. The observed current–time response showed good memory retention behavior of the fabricated devices. The carrier transport mechanism of the devices has been described on the basis of I–V experimental results and electronic structure.
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