Year-end Sale % OFF 
Abstract
Recently, ferroelectric bismuth lanthanum titanate (Bi3.25La0.75Ti3O12) thin film has been expected as a novel material for FRAM device since it has a large polarization, is fatigue free, and can be crystallized at low temperature compared to SrBi2Ta2O9 material. The BLT thin film was fabricated successfully on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized in the temperature range of 600 ∼700°C using rapid thermal process and quartz tube furnace. X-ray diffraction shows a single-phase film. The spontaneous polarization (Ps) and the switching polarization of BLT film annealed at 700°C for 2 min are 16.75 and 26.28 uC/cm2, respectively.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
