Abstract
AbstractFor the accurate characterization of organic layered structures, a novel methodology to fabricate the bevel structure is suggested by utilizing the argon cluster ion‐beam sputtering (Ar GCIB), namely, little chemical damage to the organic material and a spatial gradient of ion dose in the sub‐millimeter range. The Ar GCIB sputtering settings are elaborately tuned on the basis of the Faraday/target current, and its optimization condition for preparing the bevel structure is determined. As a standard sample, an organic bevel structure is manufactured from the organic layered structure of C60/boron subphthalocyanine chloride/poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) films, and their molecular distributions and chemical/electronic structures are investigated using various analytical techniques, including X‐ray photoelectron spectroscopy, secondary ion mass spectrometry, Auger electron spectroscopy, Raman spectroscopy, and matrix‐free ultraviolet‐laser desorption/ionization. Every experimental result demonstrates clearly that the bevel structure prepared by the method keeps its original molecular distribution and chemical structure. On the contrary, conventional etching techniques such as Ar+ ion beam, focused ion beam, and ion milling cause critical distortion in chemical information without exception. Ultimately, the suggested method, a unique way to prepare a damage‐free organic bevel structure, widens the availability of analytical techniques that have limitations in spatial or depth resolution.
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