Fabrication of Ballistic Quantum Wires and Their Transport Properties

Abstract

Quantum wires with width less than the elastic mean free path and comparable to the Fermi wavelength are fabricated using high resolution electron beam lithography and ion beam etching. The low temperature magnetotransport properties of the quasi-ballistic channels reveal novel phenomena resulting from the ballistic motion of electrons. We propose new side-gate transistors. The two dimensional electron gas remaining at both sides of the channel is utilized to narrow the conduction width. This technique may open the way to control electrostatically an Aharonov-Bohm phase shift in the GaAs-AlGaAs loop.