Abstract
We report the fabrication of atomically abrupt interfaces of titanium dihydride (δ-TiH2) films and α-Al2O3(001) substrates. With the assistance from reactive hydrogen in plasma, single-phase δ-TiH2 epitaxial thin films were grown on α-Al2O3(001) substrates using the reactive magnetron sputtering technique. Scanning transmission electron microscopy measurements revealed an atomically abrupt interface at the δ-TiH2(111) film and Al2O3(001) substrate. These results indicate that the reactive magnetron sputtering has great potential to deposit various epitaxial thin films of hydrides restricted by the hydrogenation limit. The fabrication of high-quality hydride epitaxial thin films with atomically controlled interfaces paves the way for future hydride electronics.
Highlights
Metal hydrides have been extensively studied as hydrogen storage materials for practical applications such as hydrogen fuel systems and fuel cells.[1,2]
It is of significant importance to introduce another deposition technique for obtaining single-phase metal hydride epitaxial thin films
Our study shows that reactive magnetron sputtering has an advantage in fabricating atomically controlled interfaces of single-phase hydride epitaxial thin films and substrates
Summary
Metal hydrides have been extensively studied as hydrogen storage materials for practical applications such as hydrogen fuel systems and fuel cells.[1,2] In addition, the recent reports in hydrides on ionic conduction of metal (Li+, Na+, Mg2+) cations[3] and hydride (H) ion[4,5] have paved the way for electrochemical applications. It is of significant importance to introduce another deposition technique for obtaining single-phase metal hydride epitaxial thin films. The growth of polycrystalline ZrH2 thin films using reactive magnetron sputtering has been reported,[14] implying the potential of the sputtering technique to obtain single-phase metal hydride epitaxial thin films and atomically controlled interfaces.
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