Abstract
Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in ZnO:As film is present in As–O state. ZnO homojunction synthesized by deposition of Al-doped n-type ZnO and intrinsic nanowire ZnO on As-doped p-type ZnO showed clear p–n diode characteristics. The neutral-acceptor bound exciton (A0X) and donor–acceptor-pair (DAP) emissions in the low temperature photoluminescence studies further support the p-type conduction in ZnO:As.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
