Fabrication of a‐plane InN nanostructures on patterned a‐plane GaN template by ECR‐MBE

Abstract

Abstracta‐plane InN nanostructures were fabricated on a hole‐patterned a‐plane GaN template by electron‐cyclotron‐resonance plasma‐excited molecular beam epitaxy (ECR‐MBE). The growth temperature should be optimized to realize precise nucleation at the patterned holes with sufficient In desorption and a sufficiently long In migration length. Polarity determination clearly revealed that a‐plane InN crystals have an anisotropic growth morphology. The InN growth rate in the N‐polar [000–1] direction is higher than those in the In‐polar [0001] and [1–100] directions. a‐plane InN nanowalls were fabricated by exploiting the different the growth rates in the 〈0001〉 and 〈1–100〉 directions.magnified image SEM image of position‐controlled a‐plane InN nanostructures grown by ECR‐MBE on a hole‐patterned a‐plane GaN template.