Fabrication of an IPL-sintered Cu circuit and its electrochemical migration behavior

Abstract

Problems associated with the oxidation of Cu nanopaste have been widely studied in efforts to develop a replacement for Ag nanopaste. The intensive pulsed light (IPL) sintering process has been suggested to solve the oxidation problem because it is a method with a short processing time and is conducted at room temperature. Cu nanopaste was fabricated with Cu nanoparticles and a functional organic matrix. Cu nanopaste screen-printed onto a polyethylene terephthalate substrate was subjected to various IPL sintering conditions, and the effects of pulse power and pulse width on the microstructure, electrical resistivity, and electrochemical migration behavior of the printed Cu patterns were investigated. The electrical properties of the Cu patterns improved with increasing pulse power and pulse width because organic residues were removed by the IPL energy. The electrical properties of the Cu patterns improved with increasing pulse power and pulse width because organic residues were removed by the IPL energy. The electrochemical migration behavior was varied because of leaked ethylene glycol from organic matrix. The dendrites from lower pulse condition has finer microstructure and increased nucleation.