Abstract
Single-crystal silicon carbide (SiC)-based pressure sensors can be used in harsh environments, as they exhibit stable mechanical and electrical properties at elevated temperatures. A fiber-optic pressure sensor with an all-SiC sensor head was fabricated and is herein proposed. SiC sensor diaphragms were fabricated via an ultrasonic vibration mill-grinding (UVMG) method, which resulted in a small grinding force and low surface roughness. The sensor head was formed by hermetically bonding two layers of SiC using a nickel diffusion bonding method. The pressure sensor illustrated a good linearity in the range of 0.1–0.9 MPa, with a resolution of 0.27% F.S. (full scale) at room temperature.
Highlights
IntroductionHigh-temperature pressure sensors are of great significance for the monitoring of the dynamic pressures of well logging instruments, chemical reaction kettles, and even combustion chambers
High-temperature pressure sensors are of great significance for the monitoring of the dynamic pressures of well logging instruments, chemical reaction kettles, and even combustion chambers.Conventional piezoresistive pressure sensors using silicon diaphragms and piezoelectric pressure sensors are usually unable to withstand temperatures higher than 700 ◦ C [1,2]
We propose an extrinsic Fabry-Perot interferometer (EFPI) pressure sensor using a single-crystal Silicon carbide (SiC) diaphragm, which is advantageous for Sensors 2016, 16, 1660; doi:10.3390/s16101660
Summary
High-temperature pressure sensors are of great significance for the monitoring of the dynamic pressures of well logging instruments, chemical reaction kettles, and even combustion chambers. We propose an EFPI pressure sensor using a single-crystal SiC diaphragm, which is advantageous for Sensors 2016, 16, 1660; doi:10.3390/s16101660 www.mdpi.com/journal/sensors. We propose an EFPI pressure sensor using a single-crystal SiC diaphragm, which is advantageous for its low internal stress and high mechanical reliability. Both the thin SiC diaphragm and the substrate are Sensors 2016, 16, 1660 fabricated by an ultrasonic vibration mill-grinding method. Its low internal stress and high mechanical reliability Both the thin SiC diaphragm and the substrate are and fabricated by an ultrasonic vibration mill-grinding method.
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