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Abstract
To increase the radio-frequency (RF) performance of AlGaN/GaN-based fin-type high electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to fabricate a device with high RF performance. In a single lithography process, the applied T-gate process shows a technique for forming a T-gate using the reactivity difference of several photoresists. The fabricated device has a steep fin width (W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fin</sub> ) of 130 nm, a fin height (H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">fin</sub> ) of 250 nm, and a gate length (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> ) of 190 nm. The device exhibits a low leakage current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ) of 6.6 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-10</sup> A/mm and a high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> current ratio of 4.7 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> . Moreover, the fabricated device achieved a high cut-off frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) of 9.7 GHz and a very high maximum oscillation frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) of 27.8 GHz. The f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> value of the proposed device is 138% higher than that of GaN-based fin-type HEMTs without T-gate.
Highlights
With a high resistance and wide band gap, GaN is considered to be the most suitable material for developing power devices and radio-frequency (RF) devices [1]–[4]
The fmax value of the proposed device is 138% higher than that of GaN-based fin-type high electron mobility transistors (HEMTs) without T-gate
AlGaN/GaN high electron mobility transistors (HEMTs) in particular have been extensively used for high-power and RF devices because of the high-density two-dimensional electron gas (2-DEG) obtainable from the AlGaN/GaN heterojunction [5]–[8]
Summary
With a high resistance and wide band gap, GaN is considered to be the most suitable material for developing power devices and radio-frequency (RF) devices [1]–[4]. Because of its structural characteristics, the planar HEMT has low gate controllability, demonstrating a high leakage current and subthreshold swing (S). To address this issue, many researchers are currently focusing on developing the. Over the past few years, AlGaN/GaN-based fin-type devices have been developed to achieve improved electrical performances in terms of, for example, better on-state current (Ion) and high-power characteristics [9]–[12]. Cho et al.: Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved RF Performance of the device at the same time. The fabricated device has very high fmax due to the low gate-resistance (RG) of T-gate
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