Fabrication of Al2O3–Mullite–AlN Multiphase Ceramic Layer on W–Cu Substrates for Power Semiconductor Packaging

Abstract

This paper proposes a novel method to manufacture ceramic insulated metal substrate for power semiconductor modules and high-temperature electronics. α-Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -mullite (Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sub> )-AlN multiphase ceramic layer was fabricated on W80Cu20/Cr substrate at 1050 °C by firing. The polycarbosilaneAlN green ceramic layer was synthesized by spin processor, and then was fired under a steady flow of wet nitrogen Al-Si-O nanocrystalline rods were formed and their diameters were about 100 nm. The α-Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -mullite-AlN multiphase ceramic layer had perfect interface bonding, and exhibited superior mechanical properties and thermal shock resistance.