Abstract
AgGaTe2 is an attractive material for the light‐absorbing layer in solar cells and has been deposited by close‐spaced sublimation using Ga2Te3 powder source. However, the samples exhibit an excess of Te, as well as undesired Mo–Te compounds, when AgGaTe2 is deposited on Mo/glass substrates. Therefore, the AgGaTe2 light‐absorbing layer is deposited using an Ag2Te and GaTe mixed powder source and examined herein. By replacing the Ga2Te3 source with GaTe, the Te content confirmed by the X‐ray fluorescent has significantly decreased. Cross‐sectional transmission electron microscopy observation indicates that the formation of Mo–Te compounds is suppressed. This is because Ga2Te3 produces additional Te gas in the initial decomposition reaction during deposition, and GaTe does not. In addition, the J–V curves show an improved conversion efficiency for solar cells fabricated using GaTe.
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