Abstract
Semiconductors with surface plasmon resonance (SPR) are promising in next‐generation photocatalysts for the application of visible and near‐infrared (Vis–NIR) light. Herein, plasmonic h‐MoO3 realizing light absorption in the Vis–NIR regions is fabricated via the supercritical CO2 method. By in situ reduction, the as‐prepared Ag/h‐MoO3 photocatalyst can be further obtained, and it reaches a current density of 20 uA cm−2 for photoelectrochemical (PEC) response, ten times the enhancement of the photoelectronic response. Such an enhanced PEC performance is attributed to the superposition of the enhanced light absorption in Vis–NIR and the efficient separation of electrons and holes.
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