Abstract
A15 Nb3Al thin-film Josephson tunnel junctions having an oxide barrier and a Pb counterelectrode have been fabricated by photolithography. Nb3Al junction characteristics have been found to be drastically influenced by pre-cleaning conditions. Excellent junction qualities with low leakage current were achieved by adopting RF sputter-etching in Ar+CF4 plasma as a pre-cleaning technique, instead of conventional Ar plasma. The chemical reaction of CF4 radicals has been found to provide great utility for obtaining high quality tunnel junctions of an A15 Nb3Al compound with a very short coherence length.
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