Fabrication of a thin double-layer thermistor based on DVB-modified polymer-derived SiCN ceramics

Abstract

Polymer-derived ceramics (PDCs) are considered to be promising candidate materials for high-temperature sensor applications. Even though the PDCs have been studied for decades, the reliable PDC-based thin film sensors have not been produced, because ceramic films are too fragile to be handled without a substrate, but the huge shrinkage during polymer-to-ceramic conversion makes it difficult to fabricate PDC-based sensing elements on conventional substrates such as Al2O3. In this study, a thin polymer-derived ceramic double-layer thermistor was developed, using a layer with a lower resistivity as the sensing element and a layer with a higher resistivity as the substrate. The difficulty in PDC-based film sensing elements fabrication on a substrate was consequently resolved, because both the sensing elements and the substrate sustained a similar shrinkage during pyrolysis. The proposed double-layer thermistor was fabricated through step-growth photopolymerization and co-pyrolysis of two similar polymer precursors: commercially available polysilazane for the high-resistivity substrate and DVB-modified polysilazane for the low-resistivity sensing part. The DVB-modified polysilazane showed a similar shrinkage during pyrolysis, whereas the resistivity of the pyrolytic product was five orders of magnitude lower. The obtained thermistor exhibited a negative temperature coefficient in the temperature range from the room temperature to 650 °C, and the resistance of the thermistor decreased smoothly as the temperature increased. The resistance-to-voltage conversion was conducted with a voltage divider equipped with a fixed resistor and the output voltage was observed to increase smoothly along with temperature. The current sensor configuration based on PDCs was reported for the first time, and is much closer to applicable sensors.